| No. | Partie # | Fabricant | Description | Fiche Technique |
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ETC |
2SK324 |
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NXP |
MCU ackage options • Up to 32-channel DMA with up to 128 request sources using DMAMUX • Memory and memory interfaces — Up to 12 MB program flash memory with ECC — Up to 256 KB of flexible program or data flash memory — Up to 2304 KB SRAM with ECC, inclu |
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ROHM |
CMOS Voltage Detector ◼ Counter Timer Built-in ◼ No delay time setting capacitor required ◼ Low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Package SSOP3 is similar to SOT-23-3 (JEDEC) ●Typical Application Circuit V DD1 V DD2 Key Specifica |
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TDK |
Single-Chip Modem w/Integrated Hybrid |
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TDK |
Single-Chip Modem |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment SOT-23F SSM3K324R 1: Gate 2: Source 3: |
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Toshiba |
N-Channel Transistor . High Breakdown Voltage : V(br)dSS=400V . High Forward Transfer Admittance : 1 Yf s l =5S(Typ. . Low Leakage Current : I GS s=±100nA(Max. ) @ VGs=±20V lDSS=lmA(Max.) @ VDs=400V . Enhancement-Mode : V t h=l . 5 ~3. 5V @ lD=lmA MAX MUM RATINGS (T |
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ETC |
Transistor |
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ROHM |
CMOS Voltage Detector ◼ Counter Timer Built-in ◼ No delay time setting capacitor required ◼ Low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Package SSOP3 is similar to SOT-23-3 (JEDEC) ●Typical Application Circuit V DD1 V DD2 Key Specifica |
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