डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
K2529 | Silicon N-Channel MOSFET 2SK2529
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source |
Renesas |
|
K2524-01MR | 2SK2524-01MR | Fuji Electric |
|
K2529 | Silicon N-Channel MOSFET | Renesas |
www.DataSheet.in | 2017 | संपर्क |