डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
K2467 | 2SK2467 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2467
2SK2467
High-Power Amplifier Application
• High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 4.0 S (typ.)
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Toshiba |
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K246 | N-CHANNEL JUNCTION TYPE Field Effect Transistor | Toshiba |
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K246 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
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K2462 | 2SK2462 | NEC |
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K2461 | 2SK2461 | NEC |
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K2466 | 2SK2466 | Toshiba |
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K246 | Small switching (60V/ 2A) | Rohm |
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K246 | Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package | Siemens Group |
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K246 | N-channel MOS-FET | Fuji |
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K2467 | 2SK2467 | Toshiba |
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K246 | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
www.DataSheet.in | 2017 | संपर्क |