IXUC160N075 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IXUC160N075 | Trench Power MOSFET ADVANCED TECHNICAL INFORMATION
Trench Power MOSFET IXUC160N075 ISOPLUS220TM
Electrically Isolated Back Surface
VDSS = ID25 = RDS(on) =
75 V 160 A 6.5 mΩ
ISOPLUS 220TM
Symbol
Test Conditions
Maximum Rat |
 IXYS Corporation |
|
| IXUC160N075 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 75V(Min) ·Static drain-source on-resistance:
RDS(on) ≤ 6.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for |
 INCHANGE |
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