डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTY32P05T | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤39mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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INCHANGE |
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IXTY32P05T | Power MOSFET TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTY32P05T IXTA32P05T IXTP32P05T
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25C to |
IXYS |
www.DataSheet.in | 2017 | संपर्क |