डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTY2R4N50P | Power MOSFET PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY2R4N50P IXTP2R4N50P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150� |
IXYS |
|
IXTY2R4N50P | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTY2R4N50P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 3.75Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lo |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |