डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTY2N60P | Power MOSFET PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY2N60P IXTP2N60P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C T |
IXYS Corporation |
|
IXTY2N60P | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTY2N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.1Ω@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and r |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |