डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTY1R4N100P | Power MOSFET PolarTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P
VDSS ID25
RDS(on)
= 1000V = 1.4A ≤ 11.8Ω
TO-252 (IXTY)
G
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA |
IXYS |
|
IXTY1R4N100P | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTY1R4N100P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |