IXTY08N100P डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IXTY08N100P | Power MOSFET PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY08N100P IXTA08N100P IXTP08N100P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = |
 IXYS |
|
| IXTY08N100P | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTY08N100P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 20Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot- |
 INCHANGE |
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