डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTV230N085T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTV230N085T IXTV230N085TS
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 230 4.4
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IL |
IXYS Corporation |
|
IXTV230N085T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 85V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.4mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
|
IXTV230N085TS | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTV230N085T IXTV230N085TS
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 230 4.4
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IL |
IXYS Corporation |
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