IXTU2N80P डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTU2N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-

PolarTM Power MOSFET IXTU2N80P IXTY2N80P IXTA2N80P VDSS = ID25 =  RDS(on) 800V 2A 6 N-Channel Enhancement Mode IXTP2N80P TO-251 (IXTU) Avalanche Rated G D Symbol E VDSS VDGR VGSS T VGSM ID25 IDM