डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTU1R4N60P | Power MOSFET PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25 |
IXYS |
|
IXTU1R4N60P | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTU1R4N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |