डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTU12N06T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 85mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable ope |
INCHANGE |
|
IXTU12N06T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU12N06T IXTY12N06T
VDSS = ID25 =
RDS(on) ≤
60V 12A 85mΩ
TO-251 (IXTU)
Symbol
VDSS VDGR
VGSM
ID25 |
IXYS |
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