IXTQ90N15T डाटा शीट PDF( Datasheet )

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T VDSS = ID25 = RDS(on) ≤ 150V 90A 20mΩ Symbol VDSS VDGR V

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var