डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTQ88N30P | PolarHT Power MOSFET PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P
V DSS
ID25
RDS(on)
= 300 V = 88 A ≤ 40 mΩ
TO-247 (IXTH)
Symbol
VDSS V
DGR
VGS VGSM ID25 |
IXYS |
|
IXTQ88N30P | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 300V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 40mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |