डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTQ88N28T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 37mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
|
IXTQ88N28T | Power MOSFET Trench Gate Power MOSFET
IXTQ88N28T
N-Channel Enhancement Mode For Plasma Display Applications
VDSS =
ID25 = ≤ RDS(on)
280V 88A 44mΩ
Symbol
VDSS VDGR
VGSM
ID25 IDRMS IDM
PD TJ TJM Tstg T
L
TSOLD
Md
Weig |
IXYS |
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