डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTQ86N20T | Power MOSFET Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalance Rated
IXTA86N20T IXTP86N20T IXTQ86N20T
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt
TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = |
IXYS |
|
IXTQ86N20T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 29mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |