डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTQ76N25T | Power MOSFET TrenchTM Power MOSFET
N-Channel Enhancement Mode
IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T
VDSS = ID25 =
RDS(on)
250V 76A 44m
Typical Avalanched BV = 300V
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P |
IXYS |
|
IXTQ76N25T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 39mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |