डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTQ60N20T | Power MOSFET TrenchTM Power MOSFET
IXTA60N20T IXTP60N20T IXTQ60N20T
VDSS ID25
RDS(on)
= 200V = 60A ≤ 40mΩ
TO-263 AA (IXTA)
N-Channel Enhancement Mode For PDP Drivers Avalanche Rated
G S D (Tab)
TO-220AB (IXTP) Sy |
IXYS |
|
IXTQ60N20T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 40mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
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