IXTQ60N10T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var

Advance Technical Information TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ60N10T VDSS = 100V ID25 = 60A RDS(on) ≤ 18.0mΩ TO-3P Symbol VDSS VDGR VGSM ID25 IDM