डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTQ480P2 | N-ChannelMOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 120mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va |
INCHANGE |
|
IXTQ480P2 | Power MOSFET Preliminary Technical Information
PolarP2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTQ480P2
VDSS =
ID25
=
RDS(on)
= trr(typ)
500V 52A 120m 400ns
Symbol
VDS |
IXYS |
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