IXTP8N70X2M डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTP8N70X2M ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob

Preliminary Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N70X2M VDSS = ID25 =  RDS(on) 700V 8A 550m N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol VDSS VDGR VGS