IXTP8N70X2 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 700V ·Static Drain-Source On-Resistance : RDS(on) ≤ 500mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lo

Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 VDSS = ID25 =  RDS(on) 700V 8A 500m TO-251 (IXTU) Symbol VDSS VDGR VGSS

isc N-Channel MOSFET Transistor IXTP8N70X2M ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob

Preliminary Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N70X2M VDSS = ID25 =  RDS(on) 700V 8A 550m N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol VDSS VDGR VGS