IXTP8N65X2 डाटा शीट PDF( Datasheet )

Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 VDSS = ID25 = RDS(on) 650V 8A 500m TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM ID25 I

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤500mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-L

Advance Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N65X2M VDSS = ID25 = RDS(on) 650V 4A 550m N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d

isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe