डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP86N20T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP86N20T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 29mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot- |
INCHANGE |
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IXTP86N20T | Power MOSFET Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalance Rated
IXTA86N20T IXTP86N20T IXTQ86N20T
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt
TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = |
IXYS |
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