डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP80N12T2 | Power MOSFET TrenchT2TM Power MOSFETs
IXTA80N12T2 IXTP80N12T2
VDSS = 120V
ID25 = 80A RDS(on) 17m
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
TO-263AA (IXTA)
Symbol
VDSS VDGR
VGSS VGSM
ID2 |
IXYS |
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IXTP80N12T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain-Source On-Resistance: RDS(on)<17mΩ ·With TO-220 packaging ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
pe |
INCHANGE |
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