IXTP76N075T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTP76N075T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 12mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 V 76 A 12 mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS