डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP6N50P | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 1.1Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot varia |
INCHANGE |
|
IXTP6N50P | Power MOSFET PolarHVTM Power MOSFET
IXTA 6N50P IXTP 6N50P
N-Channel Enhancement Mode Avalanche Rated
VDSS = 500 ID25 = 6 RDS(on) ≤ 1.1
V A
Ω
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL T |
IXYS |
www.DataSheet.in | 2017 | संपर्क |