डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP64N10L2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP64N10L2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot |
INCHANGE |
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IXTP64N10L2 | Power MOSFET Preliminary Technical Information
LinearL2TM Power MOSFET w/Extended FBSOA
IXTA64N10L2 IXTP64N10L2 IXTH64N10L2
VDSS = 100V
ID25 = 64A RDS(on) 32m
N-Channel Enhancement Mode Guaranteed FBSOA Avalanche |
IXYS |
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