IXTP64N055T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP64N055T IXTY64N055T VDSS ID25 = = RDS(on) ≤ 55 V 64 A 13 mΩ TO-220 (IXTP) G D (TAB) D S Symb

isc N-Channel MOSFET Transistor IXTP64N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot