IXTP55N075T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTP55N075T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 19.5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L

Preliminary Technical Information TrenchMVTM Power MOSFET IXTP55N075T IXTY55N075T N-Channel Enhancement Mode Avalanche Rated VDSS = 75 ID25 = 55 RDS(on) ≤ 19.5 V A mΩ TO-220 (IXTP) Symbol VDSS VDGR VG