IXTP50N20PM डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTP50N20PM ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 60mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot v

PolarTM Power MOSFET (Electrically Isolated Tab) IXTP50N20PM VDSS = ID25 =  RDS(on) 200V 50A 60m N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md