IXTP50N20P डाटा शीट PDF( Datasheet )

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA50N20P IXTP50N20P IXTQ50N20P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°

isc N-Channel MOSFET Transistor IXTP50N20P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 60mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot v

isc N-Channel MOSFET Transistor IXTP50N20PM ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 60mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot v

PolarTM Power MOSFET (Electrically Isolated Tab) IXTP50N20PM VDSS = ID25 =  RDS(on) 200V 50A 60m N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md