IXTP50N085T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTP50N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 23mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot

Preliminary Technical Information TrenchMVTM Power MOSFET IXTP50N085T IXTY50N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 V 50 A 23 mΩ TO-220 (IXTP) GD S D (TAB) Symbol