IXTP4N80P डाटा शीट PDF( Datasheet )

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS(on) ≤ 3.4 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR

isc N-Channel MOSFET Transistor IXTP4N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-t