डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP4N70X2M | Power MOSFET Preliminary Technical Information
X2-Class Power MOSFET
(Electrically Isolated Tab)
IXTP4N70X2M
VDSS =
ID25 = RDS(on)
700V 4A 850m
N-Channel Enhancement Mode
OVERMOLDED TO-220
Symbol VDSS VDGR VGS |
IXYS |
|
IXTP4N70X2M | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP4N70X2M
·FEATURES ·High power dissipation ·Static drain-source on-resistance:
RDS(on) ≤ 850mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob |
INCHANGE |
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