IXTP44N10T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTP44N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 30mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-

TrenchTM Power MOSFET IXTY44N10T IXTP44N10T VDSS = 100V ID25 = 44A RDS(on)  30m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOL