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IXTP2N80 | High Voltage MOSFET Advanced Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 2N80 IXTP 2N80
VDSS ID25
RDS(on)
= 800 V = 2 A = 6.2 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR |
IXYS Corporation |
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IXTP2N80 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP2N80
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.2Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to |
INCHANGE |
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IXTP2N80P | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP2N80P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
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IXTP2N80P | Power MOSFET PolarTM Power MOSFET
IXTU2N80P IXTY2N80P IXTA2N80P
VDSS =
ID25 = RDS(on)
800V 2A 6
N-Channel Enhancement Mode
IXTP2N80P
TO-251 (IXTU)
Avalanche Rated
G
D
Symbol
E VDSS
VDGR
VGSS
T VGSM
ID25 IDM |
IXYS |
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