डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP28P065T | P-Channel MOSFET isc P-Channel MOSFET Transistor
IXTP28P065T
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤45mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable |
INCHANGE |
|
IXTP28P065T | Power MOSFET TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTA28P065T IXTP28P065T
VDSS =
ID25 = ≤ RDS(on)
- 65V - 28A
45mΩ
TO-263 AA (IXTA)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA ES
PD
TJ TJM T |
IXYS |
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