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IXTP240N055T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA240N055T IXTP240N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 240 3.6
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRM |
IXYS |
|
IXTP240N055T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP240N055T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L |
INCHANGE |
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