डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP20N65X | Power MOSFET Preliminary Technical Information
X-Class Power MOSFET
N-Channel Enhancement Mode
IXTA20N65X IXTP20N65X IXTH20N65X
VDSS = ID25 = RDS(on)
650V 20A 210m
TO-263 (IXTA)
Symbol
VDSS VDGR
VGSS VGSM
ID25 I |
IXYS |
|
IXTP20N65X | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) ≤ 210mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
|
IXTP20N65XM | Power MOSFET X-Class Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
IXTP20N65XM
VDSS =
ID25 = RDS(on)
650V 20A 210m
OVERMOLDED TO-220
Symbol VDSS VDGR VGSS VGSM ID25 IDM dv/dt
PD TJ TJM Tstg |
IXYS |
|
IXTP20N65XM | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP20N65XM
·FEATURES ·High power dissipation ·Static drain-source on-resistance:
RDS(on) ≤ 210mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |