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IXTP10N60PM | PolarHV Power MOSFET www.DataSheet4U.com
Preliminary Technical Information
PolarHVTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated
IXTP 10N60PM
VDSS ID25
RDS(on)
= 600 V = 5 A ≤ 740 mΩ
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IXYS Corporation |
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IXTP10N60PM | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static drain-source on-resistance
: RDS(on) ≤ 0.74Ω@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations fo |
INCHANGE |
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