IXTP10N60P डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTP10N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot

PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 600V ID25 = 10A RDS(on) ≤ 740mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM

www.DataSheet4U.com Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP 10N60PM VDSS ID25 RDS(on) = 600 V = 5 A ≤ 740 mΩ

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 0.74Ω@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations fo