IXTP05N100M डाटा शीट PDF( Datasheet )

High Voltage MOSFET IXTP05N100M (Electrically Isolated Tab) VDSS = ID25 = RDS(on) ≤ 1000V 700mA 17Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var