डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH50N20 | MegaMOS FET www.DataSheet4U.com
MegaMOSTMFET
IXTH 50N20 IXTM 50N20
VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Test Conditions TJ |
IXYS Corporation |
|
IXTH50N20 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 45mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |