IXTH30N50L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTH30N50L ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% av

Preliminary Technical Information Power MOSFET with Extended FBSOA N-Channel Enhancement Mode IXTH30N50L IXTQ30N50L IXTT30N50L D O DD Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS PD TJ TJM Tstg TL TSOLD M

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va

LinearL2TM Power MOSFET w/ Extended FBSOA IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 N-Channel Enhancement Mode D O DD R Gi G O ww O S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight