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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH30N50 | Power MOSFET www.DataSheet4U.com
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 30N50
VDSS = 500 V 30 A ID (cont) = RDS(on) = 0.17 Ω
Symbol V DSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = |
IXYS Corporation |
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IXTH30N50 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 170mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va |
INCHANGE |
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IXTH30N50L | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTH30N50L
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% av |
INCHANGE |
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IXTH30N50L | Power MOSFET Preliminary Technical Information
Power MOSFET with Extended FBSOA
N-Channel Enhancement Mode
IXTH30N50L IXTQ30N50L IXTT30N50L
D O DD
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS PD TJ TJM Tstg TL TSOLD M |
IXYS |
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IXTH30N50L2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 200mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va |
INCHANGE |
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IXTH30N50L2 | Power MOSFET LinearL2TM Power MOSFET w/ Extended FBSOA
IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2
N-Channel Enhancement Mode
D O DD
R Gi
G O ww
O
S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md Weight
|
IXYS |
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IXTH30N50P | PolarHV Power MOSFET PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS
V= DSS
ID25 = ≤ RDS(on)
500 30
200
V A mΩ
TO-247 AD (IXTH)
Symbol
Test C |
IXYS |
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