डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH300N04T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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IXTH300N04T2 | Power MOSFET Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH300N04T2
VDSS = ID25 =
RDS(on) ≤
40V 300A 2.5mΩ
TO-247
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA E |
IXYS |
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