IXTH270N04T4 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.7mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari

Preliminary Technical Information TrenchT4TM Power MOSFET IXTP270N04T4 IXTH270N04T4 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on)  40V 270A 2.4m TO-220AB (IXTP) Symbol VDSS VDGR