IXTH160N15T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTH160N15T ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.6mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum

Preliminary Technical Information TrenchHVTM Power MOSFET IXTH160N15T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150 160 9.6 V A mΩ Symbol VDSS V DGR VGSM I D25 ILRMS IDM I A E